Prof.A M Mahajan

Prof.A M Mahajan


Research Interests

Research Experience (25+ Years)
Master of Philosophy in Electronics (M.Phil.):Dissertation Title: "Design and Investigation of Some Active R filter configuration" (1992-94)
Doctor of Philosophy (Ph. D.) (1998-2003) Ph.D. Thesis: "FABRICATION OF PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM AND GROWTH OF THIN FILMS USING PECVD"

Hands on Research Experience:

  • In designing and commissioning of Thermal CVD, PECVD Machines.
  • In simulation and optimization of the process parameters.
  • Deposition of thin films like SiO2, SiON and SiN using Thermal CVD & PECVD.
  • An exposure is taken towards Atomic Layer Deposition ( ALD) of High K Materials of very few nm thicknesses, at Materials and devices laboratory for Microelectronics i.e. MDM Lab at Agrate Brianza, Milan, Italy during my last visit of 2 days in Dec-06.

Capable of handling (working with) the following sophisticated characterization equipments:

  • Ellipsometer (Philips SD-1000),
  • FTIR Spectrophotometer (Shimadzu-8400, Nicolet 380),
  • Optical microscope, SEM , EDAX, TEM, XRD , UV VIS Spectrophotometer etc.
  • Working ability in Clean room environment.
  • Gained expertise in the chemical treatment of Silicon wafers required prior to processing.
  • Gained experience on Photolithographic techniques
  • Guided (Research based project) Master (M.Sc.) thesis: 100
  • Evaluated (Research based project) Master thesis as an examiner: 50

Current Research Interest:

  • Deposition of high-k dielectric thin films (by PEALD, RF-Sputtering),fabrication of novel High-k / Metal Gate stacks on Si, Ge & compound semiconductors, MOS capacitors and characterization for advanced CMOS technology (FEOL).
  • Fabrication of high-k/2D (or 2D/high-k) based MOS capacitors Optoelectronics applications
  • Fabrication of novel high-k nanolaminated MIM structures for Memoristors/RF applications
  • Fabrication and Characterization of 2D transition metal dichalcogenides (TMDs) based metal oxide semiconductor devices
  • Deposition of low dielectric thin films, Aerogel, Xerogel, Surfactant and Porogen based low-k thin films on Si substrates and their characterization, fabrication of MIS structures for ULSI technology (BEOL).
  • Investigation of novel rare earth oxide materials for nano devices for future ULSI technology.
  • Polymer based gas sensors.
  • Deposition of high-k dielectric thin films (by PEALD, RF-Sputtering),fabrication of novel High-k / Metal Gate stacks on Si, Ge & compound semiconductors, MOS capacitors and characterization for advanced CMOS technology (FEOL).
  • Fabrication of high-k/2D (or 2D/high-k) based MOS capacitors Optoelectronics applications
  • Fabrication of novel high-k nanolaminated MIM structures for Memoristors/RF applications
  • Fabrication and Characterization of 2D transition metal dichalcogenides (TMDs) based metal oxide semiconductor devices
  • Deposition of low dielectric thin films, Aerogel, Xerogel, Surfactant and Porogen based low-k thin films on Si substrates and their characterization, fabrication of MIS structures for ULSI technology (BEOL).
  • Investigation of novel rare earth oxide materials for nano devices for future ULSI technology.
  • Polymer based gas sensors.

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